december 2005 FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet ?2005 fairchild semiconductor corporation FDMC3300NZA rev b www.fairchildsemi.com 1 FDMC3300NZA monolithic common drain n-chan nel 2.5v specified powertrench ? mosfet 8a,20v,26 m ? general description this dual n-channel mosfet has been designed using fairchild semiconductor?s advanced power trench process to optimize the r ds (on)@v gs =2.5v on special microfet leadframe with all the drains on one side of the package. applications ? li-lon battery pack features ? r ds(on) = 26m ? @ v gs = 4.5 v, i d = 8a ? r ds(on) = 34m ? @ v gs = 2.5 v, i d = 7a ? >2000v esd protection ? low profile-1mm maxium-in the new package microfet 3.3x3.3 mm ? pb-free and rohs compliant absolute maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current -continuous (note 1a) -pulsed 8 a 40 p d power dissipation (steady state) (note 1a) 2.4 w t j , t stg operating and storage junction temperature range -55 to +150 o c r ja thermal resistance, junction-to-ambient (note 1a) 52 o c/w r ja thermal resistance, junction-to-ambient (note 1b) 108 r jc thermal resistance, junction-to-case (note 1) 5 device marking device reel size tape width quantity 3300a FDMC3300NZA 7? 12mm 3000 units d1 d2 d2 d1 d1 d2 d2 d1 s1 g1 s2 g2 d1 d2 d2 d1 d1 d2 d2 d1 s1 g1 s2 g2 5 4 6 3 7 2 8 1 l e a d f r e e m t a e l n t i o m p e n i
FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet FDMC3300NZA revb www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain-source breakdown voltage v gs = 0v , i d = 250 p a 20 - - v ' b vdss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c - 12.0 - mv/ c i dss zero gate voltage drain current v ds = 16v, v gs = 0v, - - 1 p a i gss gate-body leakage, v gs = r 12v, v ds = 0v - - r 10 p a on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 p a 0.6 - 1.5 v ' v gs(th) ' t j gate threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c - -3.1 - mv/ c r ds(on) static drain-source on-resistance v gs = 4.5v, i d = 8a - 20 26 m : v gs = 2.5v, i d = 7a 25 34 v gs = 4.5v, i d = 8a, t j =150c - 29 38 g fs forward transconductance v ds = 5v, i d =8 a - 29 - s (note 2) dynamic characteristics c iss input capacitance v ds = 10v, v gs =0v, f = 1.0mhz - 610 - pf c oss output capacitance - 165 - pf c rss reverse transfer capacitance - 115 - pf r g gate resistance f = 1.0mhz - 1.7 - : switching characteristics (note 2) t d(on) turn-on delay time v dd = 10v, i d = 1a v gs = 4.5v, r gen = 6 : - 8 16 ns t r turn-on rise time - 8 16 ns t d(off) turn-off delay time - 19 34 ns t f turn-off fall time - 9 18 ns q g total gate charge v ds = 10v, i d = 8a, v gs = 4.5v - 8 - nc q gs gate-source charge - 1 - nc q gd gate-drain charge - 2 - nc drain-source diode characteristics and maximum ratings v sd drain-source diode forward voltage v gs = 0v, i s = 2a (note 2) - 0.7 1.2 v t rr diode reverse recovery time i f = 8a, di f /dt=100a/ p s - - 21 ns q rr diode reverse recovery charge - - 6 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 oz.copper pad on a 1.5x1.5 in board of fr-4 material .r t jc are guaranteed by design while r t ja is determined by the user?s board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0% b. 108 c/w when mounted on a minimum pad of 2 oz copper a. 52 c/w when mounted on a 1 in 2 pad of 2 oz
FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet FDMC3300NZA revb www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 10 20 30 40 i d , drain current (a) v ds , drain-source voltage (v) pulse duration =300 p s duty cycle =2.0% max v gs = 4.5v 3.5v 3.0v 2.5v 2.0v waveforms in descending order: on region characteristics figure 2. 4 8 12 16 20 24 28 32 36 40 0.8 1.0 1.2 1.4 1.6 1.8 2.0 normalized drain to source on-resistance i d , drain current (a) v gs = 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v on-resistance variation with drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 pulse duration =300 p s duty cycle =2.0% max i d = 8a v gs = 4.5v normalized drain to source on-resistance t j , junction temperature ( q c) on resistance variation with temperature figure 4. 0246810 0.01 0.02 0.03 0.04 0.05 0.06 i d =4a pulse duration=300 p s duty cycle=2.0% max t j = 25 q c t j = 125 q c r ds(on) , on-resistance (ohm) v gs , gate to source voltage (v) on-resistance variation with gate-to-source votlage figure 5. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 pulse duration=300 p s duty cycle=2.0% max t j = - 55 q c t j = 25 q c t j = 125 q c v ds = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 6. 0.00.20.40.60.81.01.21.4 1e-4 1e-3 0.01 0.1 1 10 100 t j =-55 q c t j =25 q c i s , reverse current(a) v sd , body diode forward voltage(v) t j =125 q c v gs =0v body diode forward voltage variation with source current and temperature
FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet FDMC3300NZA revb www.fairchildsemi.com 4 figure 7. gate charge characteri 0 2 4 6 8 10121416 0 2 4 6 8 v dd =15v v dd =10v v dd =5v i d =8a v gs , gate to source voltage(v) q g , gate charge (nc) stics figure 8. capacitance characteristics 0.1 1 10 100 1000 c rss c oss c iss f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) 20 50 figure 9. 0.1 1 10 100 0.01 0.1 1 10 100 dc 1s 10s 100ms 10ms 1ms rdson limited i d , drain current(a) v ds , drain-source voltage(v) v gs =4.5v single pulse r t ja =108 q c/w t a =25 q c 100 p s safe operating area figure 10. maximum cont inuous drain current vs ambient temperature 25 50 75 100 125 150 0 2 4 6 8 10 r t ja =108 q c/w v gs =4.5v i d , drain current(a) t a , ambient temperature ( q c ) v gs =2.5v figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 p (pk) , peak transient power(w) t, rectangular pulse duration(s) single pulse r t ja =108 q c/w t a =25 q c single maximum power dissipation typical characteristics t j = 25c unless otherwise noted
FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet FDMC3300NZA revb www.fairchildsemi.com 5 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 single pulse d = 0.5 0.2 0.1 0.05 0.02 0.01 normalized thermal impedance z t ja t, rectangular pulse duration(s) duty cycle - descending order transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet FDMC3300NZA revb www.fairchildsemi.com 6
FDMC3300NZA rev b www.fairchildsemi.com 7 FDMC3300NZA monolithic common drain n- channel 2.5v specified powertrench ? mosfet trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functi on or design. fairchild does not assume any liability arising out of the appl ication or use of any product or circuit described herein; neither does it convey any lice nse under its patent rights, nor the rights of others. life support policy fairchild?s products are not auth orized for use as critical compon ents in life support devices or systems without the express wr itten approval of fairchil d semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordanc e with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i17
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